Ion Sensitivity of Hygroscopic Insulator Field Effect Transistors
نویسندگان
چکیده
Given the many and varied roles of ions in living organisms, biocompatible organic ion sensors are a matter considerable interest. In this work, simple, low-voltage, solid-state hygroscopic insulator field effect transistors (HIFETs) have been tested to characterise their ion-sensitive properties. Two biologically relevant salt solutions, sodium chloride (NaCl) potassium (KCl), were tested. To assess pH sensitivity, solutions hydrochloric acid (HCl) hydroxide (NaOH) also The salts acidic caused similar, concentration-dependent changes HIFET performance from 10 mM 1 M, consistent with an increase concentration insulator, increasing device capacitance. By contrast, basic overall decrease performance, net removal due acid-base reactions between analyte. These results show that HIFETs exhibit promising sensitivity range ions, can therefore serve as platforms for future ion-selective devices.
منابع مشابه
fabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
Imperfect two-dimensional topological insulator field-effect transistors
To overcome the challenge of using two-dimensional materials for nanoelectronic devices, we propose two-dimensional topological insulator field-effect transistors that switch based on the modulation of scattering. We model transistors made of two-dimensional topological insulator ribbons accounting for scattering with phonons and imperfections. In the on-state, the Fermi level lies in the bulk ...
متن کاملTopological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22033, Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, VA 22033, Materials Science and Engineering Division, National Institute of Standards an...
متن کاملIon sensitive Field Effect Transistors (ISFETs) Basics and Applications
Microfabricated semiconductor devices are essential components of many biochemical sensors today, and show great potential for advanced devices in the future. Since the proposal of an pH sensitive device, based on the technology of field effect transistors, was made in the early seventies, these so called ISFETs have been of great interest for the application in chemical and biological sensing ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ACS applied electronic materials
سال: 2022
ISSN: ['2637-6113']
DOI: https://doi.org/10.1021/acsaelm.1c01205